Ultra-Low Power Design and RF Circuit Reliability for Internet of Things (IoT)

When:
August 11, 2016 @ 5:30 pm – August 11, 2016 @ 8:00 pm America/New York Timezone
2016-08-11T17:30:00-04:00
2016-08-11T20:00:00-04:00
Where:
Room: Robert Noyce (RHR-153)
Bldg: Fairchild Semiconductor
Contact:
MAILTO:alister.young@fairchildsemi.com

Co-sponsored by: Alister Young

Wearable electronics, intelligent devices, medical electronics, and more recently internet of things (IoT) are dramatically changing the way we experience life by providing rich information about our activities, health, and the environment. To be truly ubiquitous, these devices must be energy autonomous and ultra-low power using the little energy available to it for computation. In addition, RF circuit reliability for wireless communication becomes increasingly important for IoT devices.

Professor Yuan is going to present research topics in ultra-low power mixed-signal ADC designs using emerging tunnel FET devices. Energy autonomous electronics using RF energy harvesting and wireless power transfer will be illustrated. In addition, RF circuit reliability subjected to hot electron and gate oxide breakdown stress and process variability will be presented.

Speaker(s): Dr. Jiann-Shiun Yuan,

Agenda:

5:30PM – 6:15PM Social/Dinner

6:15PM – 6:30PM IEEE Business

6:30PM – 8:00PM Lecture/Q&A

Location:
Room: Robert Noyce (RHR-153)
Bldg: Fairchild Semiconductor
82 Running Hill Road
South Portland, Maine
04106