A Simulation Perspective: Cross-Coupling Effects analysis of devices for advanced technological nodes

The crescent demand for performance and speed of the integrated circuits has led the semiconductor industry to focus on the ever-increasing number of integrated devices in the same chip. Since the middle of the 60s’, this number has followed the Moore´s Law, which states that the number of integrated devices should double every two years. With the process of continuous dimensions reduction of the devices, degraded behavior arose due to a harmful effect called short channel effects, and also, silicon has reached its limits with respect to the devices’ shrinkage. To keep the continuous development, not only Moore´s law is observed to maintain the increase in devices’ integration in recent technologies, but also new interconnect and packaging schemes and new compact layout rules techniques have also become an interest in the research to maintain the development to supply the system´s demand.

During the lecture, the characteristics of the coupling effects that can arise with the reduction of the distance between the devices will be outlined, aiming at an optimization of the space in the silicon wafer with a compact layout scheme.

Co-sponsored by: IEEE North Jersey Section

Speaker(s): Fernando Jose da Costa ,

Agenda:
Event Time: 4:45PM to 6:00 PM

Venue: Kiernan Conference Room (ECE 202), ECEC, NJIT, Newark

Refreshments: 4:45 PM

Talk at 5:00 PM

Seminar in ECE 202 All Welcome: There is no fee/charge for attending IEEE technical seminar. You don’t have to be an IEEE Member to attend. Refreshment is free for all attendees. Please invite your friends and colleagues to take advantage of this Invited Distinguished Lecture.

Room: 202, Bldg: ECEC, 154 Summit Street, Newark, NJ 07102, NJIT, Newark, New Jersey, United States, 07102