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Advances in GaN Devices
November 3, 2022 @ 11:00 am - 12:00 pm
Gallium Nitride (GaN) power FETs have been in production for over 10 years, and advances continue to
be made. Covered in this talk is a review of GaN FETs, and recent advances in the GaN devices and also in
the understanding and application of GaN devices. Included are reliability advances, packaging, board
layout advances, and thermal design. Also covered is an introduction to the structure of GaN ICs. Finally,
a look at the near future of GaN devices and their application are explored.
Speaker(s): Brian Miller,
Bldg: Hauppauge Radisson, 110 Motor Parkway, Hauppauge, New York, United States