Maine EDS/SSC Chapter Meeting w/The Emerging Challenge of and Biomimetic Solutions to Self-heating In FINFET, ETSOI, Nanosheet, & Surround gate Transistors: A Material, Device and System Perspective

Co-sponsored by: yong.liu@onsemi.com

By early 2000s, many researchers would begin their talks with an iconic cartoon that compared the power dissipation of an IC, with that of a rocket nozzle and the Sun. The message was clear: the voltage must be scaled to keep power-dissipation at bay. Fast forward to 2017 – the tyranny of short channel effects at the sub 32 nm nodes has led to the development of FINFET and ETSOI technologies, with Si Nanosheet-FET and gate-all-around III-V transistors on the horizon. The short channel effects are controlled, but at the expense of additional self-heating of the system. Stacks of materials (many poor thermal conductors) now surround the very hot channel to make the bad situation worse. In this talk, I explain how self-heating redefines and conflates the traditional notions of performance and reliability of transistors and frontend and backend reliability of modern ICs. I will also explain how high-frequency operation and novel biomimetic heat-dissipation strategies may help manage this emerging performance and reliability challenge for sub-20nm technologies.

Speaker(s): Prof. Muhammad A. Alam,

Agenda:

The Seminar is scheduled between 11:30AM-12:30PM,

A lunch is provided at the ON Semi Cafeteria immediately after the Seminar.  

Both the Seminar and Lunch are Free for the Attendees.

Location:
Bldg: South Portland (WA)-Room-Malcolm Baldrige
ON Semiconductor
333 Western Ave
South Portland, Indiana
04106