Transistor Evolution: From MOSFET to Tunnel-FET

Co-sponsored by: Ajay Poddar

The Field Effect Transistor (FET) is the main device for the integrated circuits era. This presentation starts with an overview of the main progress steps of FET evolution and finish with a discussion of possible FET devices for future technologies. The starting point was the Lilienfeld patent filled in 1925 that was not fabricated due to the technological difficulties. Experimental Metal-Oxide-Semiconductor FET (MOSFET) was only obtained in 1960. The classical MOSFET was composed by Aluminum (Metal), silicon dioxide (Oxide) and Silicon (Semiconductor). In order to follow the Moore´s Law evolution and to avoid the short channel effects the classical MOSFET have to be upgraded using new materials and new device structures in order to improve the electrostatic control between gate and channel. The MOSFET has been upgraded with different gate electrode like polysilicon heavily doped, TiN and TaN. The gate oxide has also been replaced to high-k dielectrics like SiON, HfSiON and HfO₂ in order to avoid gate leakage current. Finally, the well-known silicon channel has also been modified to strained silicon (uniaxial and biaxial), SiGe, Ge, InGaAs in order to boost the carriers mobility. The MOSFET structure has been improved from Bulk MOSFET to SOI (Silicon-on-Insulator) MOSFET and later from planar to vertical multiple-gate devices like FinFET, Triple Gate and Gate all around devices for enhancing the electrostatic coupling. New type of device conduction mechanism like Tunnel-FET devices (TFETs) have been studied to replace the conventional drift-diffusion conduction mechanisms due to the benefits obtained by tunneling conduction. The analog behavior of the TFET device will be presented. Nanowire devices and the first basics circuits with Tunnel-FET will be discussed and compared with FinFET ones.

Speaker(s): Prof. Dr. Joao Antonio Martino,

Agenda:

4:45 PM- Refreshments and Networking

5:00PM-6:30 PM: Talk by Prof. Dr. Joao Antonio Martino, Professor at University of Sao Paulo, Brazil

Seminar in ECE 202

All Welcome: There is no fee/charge for attending IEEE technical semiar. You don’t have to be an IEEE Member to attend. Refreshmen is free for all attendess. Please invite your friends and colleagues to take advantages of this Invited Talk.

Location:
Room: 202
Bldg: ECEC
161 Warren Street
Newark, New Jersey
07102