Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for bridging circuit design and technology development over the past decades. In this talk, we begin with an overview of the historical role of CMs and fundamental equations. Evolution of MOSFET CMs, from bulk to SOI and FinFETs, is reviewed and their inter-relationships discussed. Unification of CMs with the unified regional modeling (URM) approach is presented, together with model validation with numerical data and verification with experimental data. Model extension to III-V HEMTs including 2-dimensional electron gas (2DEG) in multiple sub-bands and trap-charge effects is presented. Co-sponsored by: IEEE North Jersey Section Speaker(s): Dr. Xing Zhou Agenda: Event Time: 4:45 PM to 6:30 PM 4:45 PM Refreshments and Networking 5:00 PM Talk by Dr. Xing Zhou EDS DL, Singapore Seminar is in ECEC 202. All Welcome: There is no fee/charge for attending IEEE technical seminar. You don’t have to be an IEEE Member to attend. Refreshments are free for all attendees. Please invite your friends and colleagues to take advantage of this Invited Distinguished Lecture. Room: ECE 202, Bldg: ECEC Building, 154 Summit Street, Newark, NJ 07102, NJIT, Newark, New Jersey, United States, 07102